| 简介 |
A magnetic semiconductor material, characteristic in that it comprises at least one type of a transition metal ion (Mn2+, Fe3+, Ru3+, Re2+ or Os3+) having five electrons in the d atomic orbital thereof as a magnetic ion, and exhibits the n-type electric conduction by the injection of an electron carrier and the p-type electric conduction by the injection of a hole carrier. Specifically, the above materials include an oxy-pnictide layered compound represented by the chemical formula : LnMnOPn, wherein Ln is at least one selected from Y and rare earth elements of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu, and Pn is at least one selected from pnicogen elements of N, P, As, Bi and Sb. A magnetic sensor, an electric current sensor and a memory device exhibiting high sensitivity can be manufactured by using a magnetic pn homojunction structure comprising a thin film of the above magnetic semiconductor material. |
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