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THIN-FILM TEMPERATURE SENSOR 发明申请

2023-09-27 4380 226K 0

专利信息

申请日期 2025-06-26 申请号 JP2005062824
公开(公告)号 JP2006242913A 公开(公告)日 2006-09-14
公开国别 JP 申请人省市代码 全国
申请人 DOSHISHA
简介 PROBLEM TO BE SOLVED : To provide a thin-film temperature sensor that can widen the use upper limit temperature of an NTC thermister temperature sensor up to 1, 200°C, having high comparative sensitivity in combustion exhaust gas temperature measurement of an automobile necessary for coping with a temperature up to 1, 200°C at maximum for a short time, accurately measuring a temperature of 900°C that does not exceed 3, 000 hours and improving use upper limit temperature, responsiveness, chemical stability, sensitivity and the like. SOLUTION : The thin-film temperature sensor makes a two-terminal or four-terminal structure as platinium or the like are made an electrode material, by depositing a high melting point thin-film of chemically stable La1-xAxBO3(B=Cr, Mn or the like), adding an alkalic rare earth metal A on an α type oxidized alumina monocrystal or sintered board, having purity of 99% or higher, usable in an oxdation and reducing the environment having chemical stability in a high temperature at high melting point by using a sputtering method. COPYRIGHT : (C)2006, JPO&NCIPI


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