| 简介 |
PROBLEM TO BE SOLVED : To provide a phase change recording film wherein, because the amorphous state thereof is stable and the resistance value thereof is large, a current value flowing when it is made amorphous is small, and to provide a sputtering target for forming the phase change recording film.
SOLUTION : The sputtering target contains in atomic%, Ge of 27-45%, Sb of 5-20%, and further contains one or two or more of B, Al, C, Si and rare earth elements of 0.5-8% in total, and further contains Ga of 0.5-8%, and the remainder has the composition composed of Te and unavoidable impurities.
COPYRIGHT : (C)2006, JPO&NCIPI |
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