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GOLD WIRE FOR SEMICONDUCTOR DEVICE CONNECTION 发明申请

2023-04-27 3530 463K 0

专利信息

申请日期 2025-06-27 申请号 JP2006001174
公开(公告)号 JP2006229202A 公开(公告)日 2006-08-31
公开国别 JP 申请人省市代码 全国
申请人 NIPPON STEEL CORP
简介 PROBLEM TO BE SOLVED : To provide gold wires for semiconductor device connection having a high strength and high bonding properties.SOLUTION : As the base in which praseodymium is contained in the range of no less than 0.0004 mass% and no more than 0.02 mass%, the metal wire for semiconductor device connection contains beryllium or aluminum, or both, in a limited range taking the bonding properties into consideration, and contains calcium, lanthanum, cerium, neodymium, and samarium in a limited range as auxiliary additive elements further taking into consideration the intermetallic compound generated in the metal wire. Due to this, compared to the case where other rare earth elements are used, it is made possible to improve the strength of the metal wire with a smaller amount of additives.COPYRIGHT : (C)2006, JPO&NCIPI


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