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Monolithic white light emitting device 发明授权

2023-06-29 2710 340K 0

专利信息

申请日期 2025-06-25 申请号 US11071223
公开(公告)号 US7098482B2 公开(公告)日 2006-08-29
公开国别 US 申请人省市代码 全国
申请人 Jae hee Cho; Suk ho Yoon; Jeong wook Lee
简介 A monolithic white light emitting device is provided. An active layer in the monolithic white light emitting device is doped with silicon or rare earth metal that forms a sub-band. The number of active layers included in the monolithic white light emitting device is one or two. When two active layers are included in the monolithic white light emitting device, a cladding layer is interposed between the two active layers. According to this light emission structure, white light can be emitted by a semiconductor, so a phosphor is not necessary. The monolithic white light emitting device is easily manufactured at a low cost and applied to a wide range of fields compared with a conventional white light emitting device that needs a help of a phosphor.


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