| 申请日期 | 2025-07-09 | 申请号 | KR1020030097049 |
| 公开（公告）号 | KR100615430B1 | 公开（公告）日 | 2006-08-17 |
| 公开国别 | KR | 申请人省市代码 | 全国 |
| 申请人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE | ||
| 简介 | Provided is a silicon nitride thin film for an optical device (500) and method for fabricating the same, wherein amorphous silicon quantum dots (510) and rare earth elements (520) are dispersed in the silicon nitride thin film, and rare earth elements are excited to emit light by the amorphous silicon quantum dots, so that luminous characteristic of rare earth elements are significantly enhanced by the amorphous silicon quantum dots to fabricate the optical device with superior performance. | ||
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