| 简介 |
PROBLEM TO BE SOLVED : To provide an electroluminescent (EL) device, and to provide a method for forming a rare earth element-doped silicon (Si)/Si dioxide(SiO2) lattice structure.
SOLUTION : The method comprises : a step 1004 of DC sputtering a layer of Si overlying a substrate; a step 1006 of DC sputtering a rare earth element for the purpose of doping the Si layer with the rare earth element; a step 1010 of DC sputtering a layer of SiO2 overlying the rare earth element-doped Si layer; a step 1012 of forming a lattice structure; and an annealing step 1014 for forming nanocrystals in the rare earth element-doped Si layer. In one aspect, the rare earth element and Si are co-DC sputtered. The steps of DC sputtering Si, DC sputtering the rare earth element, and DC sputtering the SiO2 are repeated 5 to 60 cycles, so that the lattice structure includes the plurality of alternating SiO2 layers and rare earth element-doped Si layers.
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