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Silicon dioxide based material producing method for fabricating integrated circuit, involves formin 发明申请

2023-04-30 2300 150K 0

专利信息

申请日期 2025-06-24 申请号 FR05050253
公开(公告)号 FR2881419A1 公开(公告)日 2006-08-04
公开国别 FR 申请人省市代码 全国
申请人 CENTRE NAT RECH SCIENT
简介 The invention relates to a manufactoring process of a material (60) with weak permittivity, including/understanding a stage of formation of cavities (66) in silicon dioxide by establishment of a gas raredifférent of helium and neon. The invention also relates to a component including/understanding of pistesmetallic and of the areas separating the aforementioned metal tracks, the aforementioned areas containing of dioxide desilicium to weak permittivity including/understanding of the cavities (66) formed by establishment of a gas raredifférent of helium and neon.


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