| 申请日期 | 2025-06-29 | 申请号 | US11044721 |
| 公开（公告）号 | US20060172489A1 | 公开（公告）日 | 2006-08-03 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Harald Seidl; Martin Gutsche; Shrinivas Govindarajan | ||
| 简介 | Method for producing a dielectric material on a semiconductor device with an atomic layer deposition procedure, whereby an aluminum oxide nitride or a silicon oxide nitride or an aluminum silicon oxide nitride layer is deposited comprising a rare earth metal-element. The invention describes a semiconductor device with a dielectric layer comprising aluminum oxide nitride or silicon oxide nitride or an aluminum silicon oxide nitride comprising a rare earth metal element. | ||
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