| 申请日期 | 2025-07-04 | 申请号 | US10954275 |
| 公开（公告）号 | US7078301B2 | 公开（公告）日 | 2006-07-18 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Nestor A Bojarczuk Jr; Eduard Albert Cartier; Supratik Guha | ||
| 简介 | A data storage element (and method of forming the same) includes a substrate comprising a semiconductor material, a metal oxide layer including an electrically insulating rare earth metal oxide disposed upon a surface of the substrate, a conductive material disposed upon the metal oxide layer, a first electrode electrically connected to the conductive material, and a second electrode connected to the substrate. | ||
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