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MEMORY ELEMENT AND MEMORY DEVICE 发明申请

2023-04-03 1550 564K 0

专利信息

申请日期 2025-07-12 申请号 KR1020060000057
公开(公告)号 KR1020060082038A 公开(公告)日 2006-07-14
公开国别 KR 申请人省市代码 全国
申请人 SONY CORPORATION
简介 PURPOSE : A memory element is provided to easily write and maintain the information of a memory element even when the memory element is miniaturized by using variation of a resistance value of the memory element. CONSTITUTION : A memory layer(4) and an ion source layer(3) are interposed between the first and the second electrodes. One element selected from Cu, Ag and Zn and one element selected from Te, S and Se are included in the ion source layer. Boron is further included in the ion source layer. A rare earth element or silicon is further contained in the ion source layer. © KIPO 2006


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