| 简介 |
PURPOSE : A memory element is provided to easily write and maintain the information of a memory element even when the memory element is miniaturized by using variation of a resistance value of the memory element.
CONSTITUTION : A memory layer(4) and an ion source layer(3) are interposed between the first and the second electrodes. One element selected from Cu, Ag and Zn and one element selected from Te, S and Se are included in the ion source layer. Boron is further included in the ion source layer. A rare earth element or silicon is further contained in the ion source layer.
© KIPO 2006 |
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