| 简介 |
PROBLEM TO BE SOLVED : To provide a method for forming a silicon nitride layer which can form the silicon nitride layer having high denseness at a high speed.
SOLUTION : In the method for forming a silicon nitride layer, plasma is generated from a nitrogen-contained gas flowed into between an electrode 2 and the surface of a silicon wafer 6 at atmospheric pressure or at a pressure close to the atmospheric pressure. Plasma 13 having a temperature gradient is brought into contact with the surface of the silicon wafer 6 to form a silicon nitride layer thereon. The nitrogen-contained gas is preferably a mixture gas of nitrogen and rare gases or a mixture gas of ammonia, rare and hydrogen gasses.
COPYRIGHT : (C)2006, JPO&NCIPI |
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