| 简介 |
FIELD : processes for producing rare and trace elements, possibly production of high-purity semiconductor - kind indium.
SUBSTANCE : method comprises steps of treating raw indium by two stages with ammonium chloride; at first stage treating at temperature of melt 190 - 210°C and at second stage - at temperature of melt 340 - 360°C. Slag is removed after first stage.
EFFECT : effective removal of impurities such as aluminum, copper, nickel, silver, zinc, cadmium, tin, thallium, lead.
2 tbl, 1 ex |
客服热线：
手机版
二维码
