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LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, AND DISPLAY DEVICE 发明申请

2023-10-04 3540 436K 0

专利信息

申请日期 2025-07-14 申请号 JP2004365370
公开(公告)号 JP2006173424A 公开(公告)日 2006-06-29
公开国别 JP 申请人省市代码 全国
申请人 SONY CORP
简介 PROBLEM TO BE SOLVED : To provide a light emitting device with strong emission intensity and a narrow half-value width of light emission wavelength by providing a quantum well and rare earth element ions in a light emitting layer. SOLUTION : The light emitting device 1 includes the light emitting layer mainly comprising silicon and containing rare earth elements. The light emitting layer contains the rare earth elements, and also includes a quantum well structure made of a porous semiconductor 12 and a semiconductor well structure 15 formed in a small pore 13 of the porous semiconductor 12. COPYRIGHT : (C)2006, JPO&NCIPI


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