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SEMICONDUCTOR LIGHT EMITTING DEVICE, AND MANUFACTURING METHOD THEREFOR 发明申请

2023-11-22 2650 84K 0

专利信息

申请日期 2025-07-01 申请号 JP2004366939
公开(公告)号 JP2006173506A 公开(公告)日 2006-06-29
公开国别 JP 申请人省市代码 全国
申请人 MATSUSHITA ELECTRIC IND CO LTD
简介 PROBLEM TO BE SOLVED : To provide a semiconductor light emitting device in which the same semiconductor layer has two functions of current constriction and luminescence by a simple method, enabling the emission of light of an arbitrary color with strong intensity, especially incandescent light, and its manufacturing method. SOLUTION : A rare earth dope layer 18 as a semiconductor layer is formed at the upper side of a light emitting layer 15, a rare earth element is added at least to a portion of it, and by forming the rare earth dope layer 18 with an adjacent contact layer, the rare earth dope layer 18 is excited by light emission from the light emitting layer 15 to generate fluorescence, and can be used as a current constriction layer. Thus, one and the same semiconductor layer combines two functions of current constriction and light emission by a simple method, thus providing a semiconductor light emission device enabling the emission of strong-intensity light with an arbitrary color, especially white light, and its manufacturing method. COPYRIGHT : (C)2006, JPO&NCIPI


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