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Method of manufacturing doped superconducting materials 发明申请

2023-07-30 3860 690K 0

专利信息

申请日期 2025-06-25 申请号 US10560284
公开(公告)号 US20060124050A1 公开(公告)日 2006-06-15
公开国别 US 申请人省市代码 全国
申请人 Colin david Tarrant; Kelvin Robert Schneider
简介 The invention provides a method of manufacturing a doped i X—Ba—Cu-0 material, the method comprising the steps of : a) mixing an X—Ba-L-0 or X—Ba—Cu-L-0 material with an X-1 Ba—Cu—O material; and b) crystallising the mixture; 1 wherein each X is independently selected from a rare earth (Group IIIB) element, yttrium, a combination of rare earth elements, or a combination of yttrium and a rare earth element; and L is selected from U, Nb, Ta, Mo, W, Zr, Hf, Ag, Pt, Ru and Sn. The invention further provides a doped material manufactured by the method of the invention.


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