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METHOD FOR MANUFACTURING DIFFUSION REGION OF RARE EARTH ELEMENT ION, LIGHT-EMITTING DIODE, AND MET 发明申请

2023-12-16 1820 269K 0

专利信息

申请日期 2025-06-28 申请号 JP2004324641
公开(公告)号 JP2006135208A 公开(公告)日 2006-05-25
公开国别 JP 申请人省市代码 全国
申请人 SONY CORP
简介 PROBLEM TO BE SOLVED : To enable control of the desired position of the concentration distribution peak values of rare earth element ions and adjustment of the luminous intensity of a light-emitting element, by keeping the rare earth element ions in a predetermined distribution conditions and moving the diffusion region of rare earth element ions in a substrate depthwise direction through heat treatment. SOLUTION : A manufacturing method comprises the steps of forming a diffusion region 16 of rare earth element ions, having a predetermined distribution in a substrate 11, and keeping rare earth element ions in a state of predetermined distribution and making the diffusion region 16 of rare earth element ions move, in the depthwise direction of the substrate 11 through heat treatment. COPYRIGHT : (C)2006, JPO&NCIPI


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