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HIGHLY HEAT CONDUCTIVE SILICON NITRIDE SINTERED BODY AND SILICON NITRIDE STRUCTURAL MEMBER 发明申请

2023-10-24 4960 570K 0

专利信息

申请日期 2025-06-29 申请号 KR1020067003214
公开(公告)号 KR1020060052985A 公开(公告)日 2006-05-19
公开国别 KR 申请人省市代码 全国
申请人 KABUSHIKI KAISHA TOSHIBA; TOSHIBA MATERIALS CO LTD
简介 Disclosed is a highly heat conductive silicon nitride sintered body which contains not less than 2 mass%% and not more than 17.5 mass%% of a rare earth element in terms of oxides, not less than 0.07 mass%% and not more than 0.5 mass%% of Fe element in terms of oxides, not less than 0.07 mass%% and not more than 0.5 mass%% of Ca element in terms of oxides, not less than 0.1 mass%% and not more than 0.6 mass%% of Al element in terms of oxides, not less than 0.3 mass%% and not more than 4 mass%% of Mg element in terms of oxides, and not more than 5 mass%% (including 0 mass%%) of Hf element in terms of oxides. © KIPO & WIPO 2007


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