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The semiconductor, and the phosphor emitting device 发明申请

2023-07-12 4630 233K 0

专利信息

申请日期 2026-04-26 申请号 JP2005508124
公开(公告)号 JPWO2004065296A1 公开(公告)日 2006-05-18
公开国别 JP 申请人省市代码 全国
申请人 AGENCY IND SCIENCE TECHN; HISAMITSU PHARMACEUTICAL CO; HITACHI CHEMICAL CO LTD
简介 The present invention provides a novel fluorescent material which has a luminance higher than that of the conventional rare earth ion-dispersed fluorescent materials and is excellent in light resistance and long-term stability, and also an optical device, such as a high-luminance display panel or lighting equipment, which uses such a fluorescent material. Semiconductor ultrafine particles are characterized by maintaining 50% or more fluorescence quantum yield of photoluminescence when they are kept dispersed in water at 10° C. to 20° C. in air for 5 days. The fluorescent material is obtained by dispersing such semiconductor ultrafine particles in a glass matrix using a sol-gel process.


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