| 简介 |
PURPOSE : Provided are a coating solution for a ferroelectric or paraelectric Bi-based dielectric thin film which is inhibited in the variation of metal composition, a paraelectric Bi-based dielectric thin film prepared by using the composition which has a high dielectric constant and a low leak current, and its preparation method.CONSTITUTION : The coating solution for a ferroelectric dielectric thin film comprises a metal oxide composite formed by the alkoxide of at least two metals of Bi and Ti represented by {Bi_(4-x), (La_z, B_(1-z))_x}_n (Ti_(3-y), A_y)O_(12+α), wherein A is at least one metal selected from V, Cr, Mn, Si, Ge, Zr, Nb, Ru, Sn, Ta and W; B is at least one metal selected from a rare earth element except lanthanum, Ca, Sr and Ba; 0<=x<4; 0<=y<=0.3; 0
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