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CONDUCTIVE SILICON NITRIDE MATERIAL AND METHOD OF MANUFACTURING THE SAME 发明申请

2023-07-31 2770 342K 0

专利信息

申请日期 2025-06-24 申请号 JP2004290328
公开(公告)号 JP2006103994A 公开(公告)日 2006-04-20
公开国别 JP 申请人省市代码 全国
申请人 YOKOHAMA TLO CO LTD
简介 PROBLEM TO BE SOLVED : To provide a conductive silicon nitride sintered compact having excellent strength and fracture toughness. SOLUTION : The silicon nitride sintered compact contains 0.2-5 wt.% nitride particle of titanium family elements having ≤0.1 μm major axis diameter, 2-20 wt.% grain boundary phase mainly containing an Si-R-Al-O-N compound (R expresses rare earth element) and the balance being silicon nitride and externally contains 0.3-12 wt.% CNT. The wear resistant member comprises the silicon nitride sintered compact and is useful as a wear resistant member. COPYRIGHT : (C)2006, JPO&NCIPI


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