客服热线:18202992950

Thin film for optical applications, light-emitting structure using the same and the fabrication met 发明授权

2023-07-21 3260 699K 0

专利信息

申请日期 2025-07-08 申请号 US10503016
公开(公告)号 US7030419B2 公开(公告)日 2006-04-18
公开国别 US 申请人省市代码 全国
申请人 Jung Hoon Shin; Se Young Seo; Hak Seung Han
简介 Thin film for optical applications, light-emitting structure using the same and the fabrication method thereof are disclosed. The present invention provides a silica or silica-related thin film for optical applications in which silicon nanoclusters and rare earth elements are co-doped. The average size of the silicon nanoclusters is less than 3 nm and the concentration of the rare earth elements is less than 0.1 atomic %. The ratio of the rare earth element concentration to that of silicon nanoclusters is controlled to range from 1 to 10 in the thin film. The thin film emits light by exciting the rare earth elements through electron-hole recombinations in the silicon nanoclusters. According to the present invention, the conditions such as the size and concentration of the silicon nanoclusters, the concentration of the rare earth element, and their concentration ratio are specifically optimized to fabricate optical devices with better performance.


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4