| 申请日期 | 2025-06-28 | 申请号 | US10362387 |
| 公开（公告）号 | US7030435B2 | 公开（公告）日 | 2006-04-18 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Fred P Gnadinger | ||
| 简介 | A memory device is formed of the one transistor cell type. Such a device has a substrate, a ferroelectric layer which is a film of rare earth manganite, and an interfacial oxide layer being positioned between the substrate and the ferroelectric layer. The invention includes such a device and methods of making the same. | ||
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