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SINTERED SILICON NITRIDE COMPACT AND CIRCUIT BOARD USING IT 发明申请

2023-08-04 2050 2019K 0

专利信息

申请日期 2025-07-11 申请号 JP2005373302
公开(公告)号 JP2006096661A 公开(公告)日 2006-04-13
公开国别 JP 申请人省市代码 全国
申请人 HITACHI METALS LTD
简介 PROBLEM TO BE SOLVED : To provide a sintered silicon nitride compact having high strength, high toughness, and high thermal conductivity. SOLUTION : At least one kind of element selected from the group consisting of Y and rare-earth elements (RE) and Mg are added as components of a sintering aid to the sintered silicon nitride compact. Microparticles with an average diameter of ≤100 nm, in which 0.6-10 wt.% of Y and the rare-earth elements in terms of the rare-earth oxides (RExOy) and Mg in terms of magnesium oxide (MgO) are contained as the total oxide content in terms of these oxides, the weight ratio represented by (RExOy)/(MgO) is >1, and the components of the sintering aid, oxygen, nitrogen, and silicon are contained, are deposited in silicon nitride particles composing the sintered silicon nitride compact. COPYRIGHT : (C)2006, JPO&NCIPI


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