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CONDUCTIVE SILICON NITRIDE MATERIAL AND PROCESS FOR PRODUCING THE SAME 发明申请

2023-08-29 1570 1515K 0

专利信息

申请日期 2025-06-26 申请号 WOJP05017701
公开(公告)号 WO2006038489A1 公开(公告)日 2006-04-13
公开国别 WO 申请人省市代码 全国
申请人 YOKOHAMA TLO COMPANY LTD; KOMEYA Katsutoshi; TATAMI Junichi; MEGURO Takeshi; KATASHIMA Tomofumi; WAKIHARA Toru
简介 [PROBLEMS] To provide a dense silicon nitride sinter having conductivity. [MEANS FOR SOLVING PROBLEMS] To a silicone nitride/rare-earth oxide/aluminum oxide system or a silicon nitride/rare-earth oxide/magnesia system is optionally added an oxide of a titanium group element, such as titanium oxide, hafnium oxide, or zirconium oxide, aluminum oxide, and/or aluminum nitride. Thereto is added an appropriate amount of carbon nanotubes (CNT). The CNT react with the silicon nitride and other ingredients which are in contact therewith or close thereto, depending on the period of burning at a high temperature, to yield silicon carbide (SiC). Becausethe silicon carbide is yielded along the nanotubes, the resultant sinter functions as a conductor excellent in heat resistance, corrosion resistance, etc.


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