| 申请日期 | 2025-07-09 | 申请号 | KR1020020054834 |
| 公开（公告）号 | KR100571454B1 | 公开（公告）日 | 2006-04-10 |
| 公开国别 | KR | 申请人省市代码 | 全国 |
| 申请人 | SHIN ETSU CHEMICAL CO LTD | ||
| 简介 | A polymer comprising recurring units of formulae (1) and (2) wherein Rand Rare H or methyl, Rand Rare C1-15 alkyl, Rto Rare H, or Rand R, and Rand Rform trimethylene or 1, 3-cyclopentylene and having a Mw of 1, 000-500, 000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution and etching resistance and lends itself to micropatterning with electron beams or deep-UV. | ||
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