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The method for manufacturing the same and scintillator 发明授权

2023-09-18 2750 49K 0

专利信息

申请日期 2025-07-19 申请号 JP09103300
公开(公告)号 JP3760459B2 公开(公告)日 2006-03-29
公开国别 JP 申请人省市代码 全国
申请人 HITACHI CHEMICAL CO LTD
简介 PROBLEM TO BE SOLVED : To prevent scintillator performance from being reduced due to a circulation beam by allowing the surface of a scintillator to be a mirror surface with brilliance and at the same time with a gentle unevenness. SOLUTION : First, an active Gd2 SiO5 single crystal with Ce that is a rare earth silicate single crystal scintillator is raised. A scintillator is cut from the single crystal. Orthophosphoric acid H3 PO4 is heated up to approximately 250 deg.C and is boiled for approximately 30 minutes until boiling stops. An etching liquid is cooled to a room temperature and the scintillator is dipped. Heating is made up to approximately 150 deg.C and etching is performed for approximately 20 minutes. Cooling is made up to a room temperature and then the crystal is picked out, thus obtaining a mirror surface with brilliance and gentle unevenness. The surface roughness of a scintillator that is obtained by etching treatment is smaller than a fluorescence wavelength and the waviness of the surface is larger than the fluorescence wavelength. A circulation beam is eliminated by waving with a sufficiently longer cycle than the fluorescence wavelength of the scintillator. Also, the formation of the mirror surface prevents scintillator performance reduction due to irregular reflection.


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