| 简介 |
The present invention refers to terbium borate-based yellow phosphor, a manufacturing method thereof and method for manufacturing the same relates to white semiconductor light emitting device. Terbium borate-based yellow phosphor of the present invention the general formula (Tb 1-x-y-z RE x A y) 3 D a B b O 12 : Ce z, (in formula, Y as of rare earths and has RE, Lu, Sc, La, Gd, Sm, Pr, Nd, Eu, Dy, Ho, Er, Yb and Tm selected from the group consisting of least one element and, as metal elements element, typically A Li, Na, K, Rb, Fr and Cs selected from the group consisting of least one element and, D Al as a third element to amphoteric element, typically, Ga and In at least one fiber selected from the group consisting of of the metal species is 0.1-, 0 ≤ x an interlayer 0.5, 0 ≤ y an interlayer 5, 0 0.5, 0 0.5, 0 an interlayer z an interlayer 5 an interlayer b an interlayer interlayer a an interlayer). phosphor to be compressed for a long time. White semiconductor light emitting device of the present invention a semiconductor light-emitting device and emitted by the light emitting element semiconductor said absorb a portion of the light the diode to prevent the light, which is different for emitting light with, the red fluorescent substance, said semiconductor light emitting element and light emitted by said light emitted by a yellow phosphor by a combination to realize white light. Excellent white semiconductor light emitting device of the present invention includes high polymer, controller connecting unit less lowering of luminous efficiency minimized. |
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