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Cu-ALLOY WIRING MATERIAL AND Cu-ALLOY SPUTTERING TARGET 发明申请

2023-07-02 2510 88K 0

专利信息

申请日期 2025-07-09 申请号 JP2004263014
公开(公告)号 JP2006077295A 公开(公告)日 2006-03-23
公开国别 JP 申请人省市代码 全国
申请人 TOSOH CORP
简介 PROBLEM TO BE SOLVED : To provide an electrode-wiring material which does not cause a heat defect such as a hillock and a void even when heated to a high temperature of 350°C or higher, has low electric resistance, is inexpensive, has high reliability, and is suitable for densifying an electron device, and to provide a sputtering target. SOLUTION : The wiring material having superior heat resistance and low electric resistance is obtained by using a Cu alloy which includes one or more elements selected from rare earth elements; a Cu alloy which includes one or more elements selected from the fourth group elements in the periodic table of the elements; or a Cu alloy which includes one or more elements selected from the rare earth elements and one or more elements selected from the fourth group elements in the periodic table of the elements. COPYRIGHT : (C)2006, JPO&NCIPI


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