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Voltage-dependent resistor and method of manufacturing the same 发明授权

2023-12-14 2770 597K 0

专利信息

申请日期 2025-07-01 申请号 US10756459
公开(公告)号 US7015787B2 公开(公告)日 2006-03-21
公开国别 US 申请人省市代码 全国
申请人 Kazutaka Nakamura
简介 A voltage-dependent resistor includes a composite of at least one semiconductive ceramic layer mainly containing ZnO and at least one metal oxide layer containing at least one of strontium and barium, at least one of manganese and cobalt, and at least one rare earth element. The material for the at least one metal oxide layer is represented by the general formula M1-xAxBO3 where M indicates the at least one rare earth element; A indicates the at least one of strontium and barium; B indicates the at least one of manganese and cobalt; and x≦0.4. The at least one semiconductive ceramic layer, which is an n-type semiconductor, is doped with a trivalent dopant. The total number of the at least one semiconductive ceramic layer and the at least one metal oxide layer is at least three.


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