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Completely buffer layer for Coated Conductors and plant texturierte to their production 发明申请

2023-09-28 1120 425K 0

专利信息

申请日期 2025-06-25 申请号 DE102004038030
公开(公告)号 DE102004038030A1 公开(公告)日 2006-03-16
公开国别 DE 申请人省市代码 全国
申请人 TRITHOR GMBH
简介 The formation of band-shaped HTSL on a metal substrate is disclosed. The HTSL includes at least one buffer layer comprising zirconates and/or rare-earth oxides. The HTSL layer is formed on the buffer layer. The buffer layer has a texturing that in the case of a RHEED measurement results in discrete reflexes and not only in diffraction rings. In particular, the buffer layer may be textured along its interface with the HTSL layer.


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