| 简介 |
PROBLEM TO BE SOLVED : To attain a sufficient light emission strength with a rare earth element added to a compd. semiconductor. SOLUTION : This semiconductor is a porous compd. semiconductor contg. a rare earth element for the emission center. The manufacturing method of this semiconductor comprises (2) forming a porous compd. semiconductor by the anodic oxidation of a single crystal compd. semiconductor, (3) depositing a rare earth element to this porous semicqnductor, and (4) annealing the porous semiconductor having this rare earth element. |
客服热线：
手机版
二维码
