| 简介 |
PURPOSE : An N-type SBTT(schottky barrier tunnel transistor) device is provided to reduce the parasitic resistance of rare earth metal silicide with relatively high electrical resistance by forming transition metal silicide with high electrical conductivity on the rare earth metal silicide so that saturation current is improved.
CONSTITUTION : A channel region is formed in a silicon layer(150). A gate(230) is overlapped with the channel region on the silicon layer, including a gate dielectric layer(210) on the interface between the silicon layer and the gate. A rare earth metal silicide layer(300) is formed as a source/drain on the silicon layer at both sides of the channel layer. A transition metal silicide layer(400) is formed on the rare earth metal silicide layer so that the transition metal silicide layer and the rate earth metal silicide layer constitute the source/drain.
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