| 简介 |
PROBLEM TO BE SOLVED : To provide a sputtering method capable of improving productivity without the need for adjusting a distance between target substrates even if an amount of erosion of the targets and the shape of a work change.
SOLUTION : In the sputtering method of arranging the target composed of a part or the whole of the components of a thin film desired to be formed inside a vacuum vessel and performing sputtering deposition by introducing at least either of rare gas or reactive gas into the vacuum vessel, a gaseous mixture composed of at least one or more kind of the rare gas is employed for the rare gas and the mixing ratio of the rare gas is changed according to the amount of erosion of the target.
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