| 简介 |
PURPOSE : A method for fabricating a semiconductor device is provided to overcome a loading effect by performing etch processes for a spacer nitride layer according to each pattern density.CONSTITUTION : A PMOS region and an NMOS region are included in a semiconductor substrate(21), divided into dense and rare pattern regions(A2, D2, B2, C2), respectively. Each gate electrode(23) is formed on the substrate. A spacer insulation layer is formed. The first mask is formed on the insulation layer to cover the rare regions of the PMOS and NMOS regions. The insulation layer in the dense pattern regions in the PMOS and NMOS regions is etched by using the first mask to form a spacer on the lateral surface of the gate electrode. The first mask is removed. The second mask is formed to cover the rare pattern regions in the PMOS and NMOS regions. The insulation layer in the rare pattern regions in the PMOS and NMOS regions is etched by using the second mask to form a spacer on the lateral surface of the gate electrode. The second mask is removed. The third mask is formed to cover the NMOS region. P-type ions are implanted into the PMOS region by using the third mask to form a P-type LDD(lightly-doped-drain) region. The third mask is removed. The fourth mask is formed to cover the PMOS region. N-type ions(37) are implanted into the NMOS region by using the fourth mask to form an N-type LDD region. The fourth mask is removed.? KIPO 2006 |
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