| 简介 |
A new diluted magnetic semiconductor-spintronics material and method for its production are disclosed. The material can be in bulk or thin film form. The material comprises zinc oxide (ZnO) which includes a transition element or a rare earth lanthanide, or both, in an amount sufficient to change the material from non-magnetic state to room temperature ferromagnetic state. The bulk crystal is grown by high pressure melt technique. A new method for growing transition metal doped ZnO thin films is presented. A metalorganic chemical vapor deposition (MOCVD) technique is used to grow thin films of transition metal doped ZnO and organic compounds have been used as source materials. |
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