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High dielectric strength monolithic Si3N4 发明申请

2023-06-11 2680 371K 0

专利信息

申请日期 2026-04-28 申请号 US10892721
公开(公告)号 US20060014624A1 公开(公告)日 2006-01-19
公开国别 US 申请人省市代码 全国
申请人 MIKIJELJ BILJANA
简介 A monolithic silicon nitride material and a method of manufacturing the material. The material is disclosed in a range of composition variations all of which exhibit high dielectric strengths suitable for use in insulator applications. Moreover, the material retains its dielectric and structural integrity even at elevated temperature, such as above 800 degrees Celsius. One embodiment of the method of manufacture is an SRBSN process comprising powder batching, powder pressing, binder removal, nitriding and sintering. The second embodiment is an SSN process comprising powder batching, binder removal and sintering. In either embodiment, the resulting Si3N4 composition also comprises up to 20% by weight of Al2O3, up to 15% by weight rare earth oxides and up to 5% by weight of other constituents.


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