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NITRIDE SINGLE CRYSTAL AND PRODUCING METHOD THEREOF 发明申请

2023-05-24 3590 233K 0

专利信息

申请日期 2025-06-29 申请号 KR1020040052577
公开(公告)号 KR1020060003616A 公开(公告)日 2006-01-11
公开国别 KR 申请人省市代码 全国
申请人 SUMITOMO ELECTRIC INDUSTRIES LTD
简介 PURPOSE : A nitride single crystal is provided to fabricate a nitride single crystal with a large crystal diameter by growing a nitride single crystal on a seed crystal. CONSTITUTION : A material transporting medium layer(12) containing a compound of a rare earth element is formed on a nitride crystal(11). A seed crystal(13) comes in contact with the material transporting medium layer to grow a nitride single crystal(14) on the seed crystal. The material transporting medium layer contains a compound of a rare earth element and at least one compound selected from a group composed of aluminum compound, alkaline-earth compound and transition metal compound. © KIPO 2006


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