| 简介 |
PROBLEM TO BE SOLVED : To provide a method and a device for forming an amorphous silicon layer reducing the content of nitrogen in a film and capable of lowering dark conductivity.
SOLUTION : Sections among a wafer tray 2 and counter electrodes 11 and 12 in which solid dielectrics 14 are mounted on at least one opposed surfaces are supplied with reaction gases G1; and a plasma gas generated by applying a voltage to the counter electrodes by a power supply 17 and plasma-exciting the gas is brought into contact with the surface of a substrate 1. The amorphous silicon layer 3 is deposited while coating the outer peripheral section of a contact between the plasma gas and the substrate 1 with a curtain gas G2, and the outer peripheral section of the curtain gas is exhausted by an exhauster 30. A rare gas is preferable as the curtain gas, and it is preferable that the gas is blown off in an inclined state toward the outside to the substrate 1. It is preferable that the inside of a reaction vessel 40 is supplied with a nitrogen gas G3 as a purge gas, and the curtain gas is fed by a supply amount larger than the difference of the supply amount between the nitrogen gas and the reaction gas.
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