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LITHIUM BORATE SINGLE CRYSTAL, LITHIUM BORATE SINGLE CRYSTAL WAFER, AND METHOD FOR MANUFACTURING T 发明申请

2022-12-22 4660 73K 0

专利信息

申请日期 2025-06-24 申请号 JP2004162111
公开(公告)号 JP2005343712A 公开(公告)日 2005-12-15
公开国别 JP 申请人省市代码 全国
申请人 SHINETSU CHEMICAL CO
简介 PROBLEM TO BE SOLVED : To provide a lithium borate (LBO) single crystal wherein the number of air bubbles in the crystal is reduced, a lithium borate single crystal wafer, and a method for manufacturing the same.SOLUTION : The LBO single crystal is produced by a Czochralski method or a Bridgman method, and contains an alkaline earth metal in an amount of not lower than 20 ppm or 30 ppm in the whole ingot. The LBO single crystal wafer is cut out from the LBO single crystal. The method for manufacturing the LBO single crystal is based on the Czochralski method or the Bridgman method, and comprises growing the single crystal at a speed of ≥0.5 mm/h from an LBO raw material melt containing the alkaline earth metal in such an amount that the concentration of the alkaline earth metal in the shoulder part of a grown single crystal becomes ≥20 ppm.


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