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SUPER-MAGNETOSTRICTIVE THIN FILM ELEMENT AND METHOD FOR MANUFACTURING THE SAME 发明申请

2023-05-06 1510 98K 0

专利信息

申请日期 2025-08-04 申请号 JP2004156009
公开(公告)号 JP2005340429A 公开(公告)日 2005-12-08
公开国别 JP 申请人省市代码 全国
申请人 FDK CORP; NAGANO PREFECTURE; WAKIWAKA HIROYUKI
简介 PROBLEM TO BE SOLVED : To obtain a super-magnetostrictive thin film element showing a high magnetostrictive characteristic of ≥700 ppm in a low magnetic field (80k A/m) and having low coercive force (≤8k A/m). SOLUTION : In the super-magnetostrictive thin film element constituted of forming a thin film consisting of a super-magnetostrictive material on a substrate, the thin film consists of a super-magnetostrictive material of a vapor-grown Rx(Fe1-yCoy)100-x (provided that R is a rare earth element containing Y) group, and the composition consists of an R amount x of 30≤x≤45 and a Co amount ratio y of 0.2≤y (preferably 0.3≤y≤0.9). During the formation of a thin film by vapor phase growth or after the formation of the thin film, the thin film is thermally treated at 200 to 350 °C.


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