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Short wavelength diode-pumped solid-state laser 发明申请

2023-01-04 4180 945K 0

专利信息

申请日期 2025-07-10 申请号 US11138606
公开(公告)号 US20050265411A1 公开(公告)日 2005-12-01
公开国别 US 申请人省市代码 全国
申请人 TAKEUCHI ERIC B; HARGIS DAVID E
简介 A diode-pumped solid-state laser including a short wavelength (e.g., blue, violet, or UV) semiconductor laser that pumps an absorption transition in a rare-earth-doped material. Responsive to this pumping, the rare-earth active ion directly emits laser radiation. A number of different wavelength outputs, including short wavelengths, are achievable dependent upon the material and the pump wavelength. The gain medium may include an active ion selected from Er3+ Sm3+, Eu3+, Tb3+, Dy3+, Tm3+, Ho3+, and Pr3+. A laser diode pump source has a wavelength in the range of about 365 nm to 480 nm to excite a laser emission in the range of 370 to 800 nm. The laser diode pump source may comprise a GaN-based semiconductor. In some embodiments, the laser diode pump source supplies a pump beam in a range of 370-380 nm, 400-415 nm, 435-445 nm, or 468-478 nm.


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