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HIGHLY HEAT CONDUCTIVE SILICON NITRIDE SINTERED BODY AND SILICON NITRIDE STRUCTURAL MEMBER 发明申请

2023-12-07 1870 1146K 0

专利信息

申请日期 2025-08-14 申请号 WOJP05009127
公开(公告)号 WO2005113466A1 公开(公告)日 2005-12-01
公开国别 WO 申请人省市代码 全国
申请人 KABUSHIKI KAISHA TOSHIBA; TOSHIBA MATERIALS CO LTD
简介 Disclosed is a highly heat conductive silicon nitride sintered body which contains not less than 2 mass% and not more than 17.5 mass% of a rare earth element in terms of oxides, not less than 0.07 mass% and not more than 0.5 mass% of Fe element in terms of oxides, not less than 0.07 mass% and not more than 0.5 mass% of Ca element in terms of oxides, not less than 0.1 mass% and not more than 0.6 mass% of Al element in terms of oxides, not less than 0.3 mass% and not more than 4 mass% of Mg element in terms of oxides, and not more than 5 mass% (including 0 mass%) of Hf element in terms of oxides.


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