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METHOD FOR MANUFACTURING SINGLE CRYSTAL 发明申请

2023-06-29 2740 171K 0

专利信息

申请日期 2025-06-25 申请号 JP2004126471
公开(公告)号 JP2005306673A 公开(公告)日 2005-11-04
公开国别 JP 申请人省市代码 全国
申请人 TDK CORP
简介 PROBLEM TO BE SOLVED : To provide a method for manufacturing a single crystal for manufacturing a garnet single crystal substrate having excellent quality required for growing a Bi-substituted rare earth iron garnet single crystal. SOLUTION : In the method for manufacturing the single crystal, a single crystal 4 is manufactured by bringing a seed crystal 5 into contact with the surface of a raw material melt 3 filled in a crucible 2 from upward, and gradually pulling the seed crystal 5 while rotating it. Before contact of the seed crystal 5 with the melt 3, the temperature of the melt 3 in an area where bubbles are floating is lowered so as to solidify the area once by controlling high frequency current flowing through a coil 1, and the solidified material is sent to the bottom by the above mentioned method. Thereby, it is possible to remove solid particles floating in the area or the solid particles and the bubbles. COPYRIGHT : (C)2006, JPO&NCIPI


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