| 简介 |
PROBLEM TO BE SOLVED : To provide a low cost manufacturing method of a semiconductor device which can restrain galvanic corrosion due to photoelectric effect generated in a cleaning process, after a metallic film has been formed inside the recess of an insulating film and form a highly reliable metallic film inside the recess of the insulating film.
SOLUTION : A recess 7 is formed in an insulating film (SiOC film) 6, and a barrier metal film 8 and a copper film 9 which become wiring are embedded inside the recess 7. After the copper film 9 and the barrier metal film 8 have been removed by using a CMP method, it is cleaned by using rare ammonia water solution and dried. The copper film 9 is oxidized exposed to oxygen atmosphere, and an oxide copper 10 is formed in the surface of the copper film 9. Thereafter, it is cleaned by using diluted oxialic acid water solution.
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