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METAL RESISTOR MATERIAL, SPUTTERING TARGET AND RESISTANCE THIN FILM 发明申请

2023-01-27 4820 83K 0

专利信息

申请日期 2025-06-27 申请号 JP2004102656
公开(公告)号 JP2005290401A 公开(公告)日 2005-10-20
公开国别 JP 申请人省市代码 全国
申请人 SUMITOMO METAL MINING CO
简介 PROBLEM TO BE SOLVED : To provide a resistance thin film having high high temperature stability and satisfactory resistance temperature properties which have not been realized by the conventional Ni-Cr-Al-Si alloy, to provide a metal resistor material for obtaining the resistance thin film, and to provide a sputtering target.SOLUTION : A metal resistor material having a composition comprising, by mass, 5 to 15% Al, 0.2 to 5.0% Si and 0.01 to 0.5% rare earth elements, and the balance Cr and Ni, and in which the ratio of Cr/Ni is 0.75 to 1.1 by mass is used for a sputtering target to deposit a resistance thin film on a substrate, and further, the resistance thin film is heat-treated, thus the metal resistor material having high high temperature stability and satisfactory resistance temperature properties can be obtained.COPYRIGHT : (C)2006, JPO&NCIPI


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