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METHOD AND DEVICE FOR PLASMA TREATMENT 发明申请

2022-12-23 4080 166K 0

专利信息

申请日期 2025-06-25 申请号 JP2004095146
公开(公告)号 JP2005285942A 公开(公告)日 2005-10-13
公开国别 JP 申请人省市代码 全国
申请人 OMI TADAHIRO
简介 PROBLEM TO BE SOLVED : To provide a method and device for plasma treatment by which the consumption of expensive krypton and xenon gases can be suppressed as much as possible and, at the same time, the damage given to an object to be treated can be reduced at the time of performing plasma treatment. SOLUTION : At the time of performing the plasma treatment on a substrate performed by using rare gases, two or more kinds of different rare gases are used. One of the rare gases is a cheap argon gas and the other gases are the krypton gas, xenon gas, or both the krypton and xenon gases having larger collision cross sections to electrons than the argon gas has. COPYRIGHT : (C)2006, JPO&NCIPI


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