| 简介 |
PROBLEM TO BE SOLVED : To provide a coating liquid for forming a Bi-based dielectric thin film showing paraelectric or ferroelectric property in compliance with applications of semiconductor memories. SOLUTION : This coating liquid for forming a Bi-based dielectric thin film showing paraelectric or ferroelectric property contains a composite metal oxide expressed by the formula : {Bi4-x, (Laz, B1-z)x}n(Ti3-y, Ay)O12+α (wherein A is a metal element such as Ge; B is a rare earth element except lanthanum or a metal element such as Ca or Sr; 0≤x<4, 0≤y≤0.3, 0
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