| 简介 |
PURPOSE : A top emitting nitride based white light emitting device and a manufacturing method thereof are provided to improve current-voltage characteristics and to enhance external quantum efficiency by using a transparent nano structure of a conductive ZnO doped with a rare-earth metal.
CONSTITUTION : A top emitting nitride based white light emitting device includes an N type nitride based clad layer(330), a P type nitride based clad layer(350) and a nitride based active layer(340) between the N type and P type nitride based clad layers. A nano-structured multifunctional ohmic contact layer is formed on the N type or P type nitride based clad layers. The nano-structured multifunctional ohmic contact layer is composed of one or more doped transparent conductive ZnO layers.
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