| 申请日期 | 2025-06-24 | 申请号 | JP2003585169 |
| 公开（公告）号 | JPWO2003088342A1 | 公开（公告）日 | 2005-08-25 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | CHIYODA CORP; NKK CORP | ||
| 简介 | A film is formed on the surface of an electronic device substrate by using plasma based on microwave irradiation via a plane antenna member having a plurality of slits in the presence of a process gas comprising at least a gas containing a film-forming substance and a rare gas. An insulating film capable of forming an electronic device substrate with an insulating film having a good electrical property can be formed. | ||
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